FQD11P06, FQU11P06 دیتاشیت

FQD11P06, FQU11P06

مشخصات دیتاشیت

نام دیتاشیت FQD11P06, FQU11P06
حجم فایل 1376.4 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQD11P06, FQU11P06

دانلود دیتاشیت

سایر مستندات

FQU11P06TU 11 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQU11P06TU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 38W
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 420pF@25V
  • Continuous Drain Current (Id): 9.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 45pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,4.7A
  • Package: IPAK-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU1
  • detail: P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

محصولات مشابه